Performance of GaAs concentrator cells under electron irradiations from 0.4 to 2.3 MeV

Gallium arsenide concentrator cells were irradiated with electrons with energies varying from 0.4 to 2.3 MeV, and their electrical performance was measured. The cells are 5*5 mm square with a 4 mm diameter illuminated area. At each of four different electron energy levels (0.4, 0.7, 1.0, and 2.3 MeV), three n/p and two p/n cells were irradiated. I-V performance measurements were made prior to irradiation and at several intermediate fluence levels. The final fluence level was 3*10/sup 15/ e/cm/sup 2/. It is concluded that the power degradation is independent of the temperature at which it is measured.<>