Characterization and Modeling of Gate-All-Around FET (GAA FET) for Low-Power and High- Performance Applications

This paper investigates Gate-All-Around Field- Effect Transistors (GAA FETs) as viable solutions for modern low-power and high-performance electronic applications. Through extensive experimental analysis involving fabrication, electrical characterization, and simulation modeling, this study delves into the intrinsic electrical properties and performance metrics of GAA FETs. Key parameters such as threshold voltage, leakage current, sub-threshold swing, and transconductance are rigorously examined to assess the transistor's operational efficiency for low-power applications. Additionally, advanced simulation models are developed and validated to accurately predict GAA FET behavior, facilitating future design enhancements for high-performance computing. The findings underscore the advantageous features of GAA FETs, positioning them as promising candidates for fulfilling the requirements of both low-power consumption and high-performance computing. This research establishes a foundation for leveraging GAA FET technology in the development of innovative electronic devices, thereby opening avenues for diverse applications across various technological domains.