Nanostructured CuO Based Reversible Memristor Devices and their Performance during Heating/ Cooling Measurements

This paper demonstrates the synthesis, characterization, scalable fabrication and heating/cooling measurements of nanostructured copper oxide (CuO) based reversible memristors. The memristor’s fabrication process is related to IC compatible microfabrication techniques and the possibility to integrate with on-chip processes. The all tested memristor devices have shown bipolar resistive switching behavior. The memristors are capable of offering a high endurance of 500 cycles and a high resistance state (HRS) to low resistance state (LRS) ratio of 2×10
²
. The process scalability and device stability was tested using processed 2-inch silicon (Si) wafers for a year in the ambient environment. Further, the reversible properties of the fabricated memristor were analyzed by stimulating the device using thermal stress. The reversible measurements were conducted varying the temperature (293 K→403 K→293 K) using a probe station associated with the heater and thermocouple. The devices and their characteristics at different temperatures confirm that the fabricated samples are reversible in nature. The developed memristors are useful for high-temperature and storage applications.