Design of SRAM Cell Using FinFET for Low Power Applications

In the relentless pursuit of enhancing integrated circuit (IC) performance, FinFET technology has emerged as a promising alternative to conventional planar CMOS technology. This study presents a comprehensive analysis of a 10T SRAM cell implemented with FinFET technology, highlighting its advantages over traditional CMOS-based designs. The proposed 10T SRAM cell leverages the unique characteristics of FinFET transistors, such as superior electrostatic control, reduced leakage currents, and enhanced scalability. The investigation includes a detailed exploration of critical parameters such as read and write stability, static noise margin, power consumption, and area efficiency. Moreover, the impact of process variations and device mismatchon the performance of the 10T SRAM cell is thoroughlyexamined. Comparative evaluations against existing CMOS-based SRAM cells provide valuable insights into the potential benefits of adopting FinFET technology for future memory designs. Large-scale computing systems requirememory cells, of which SRAM is the most common form, taking up more than 60% of chip space. FinFETs are used to construct a proposed SRAM cell in 18nm technology.