SCR Device Design with Ultra-Low Capacitance and Low Trigger Voltage

Data interfaces are widely used and the transmission rate is increasing, which puts higher requirements on the interface Electro Static Discharge (ESD) protection capability. A bi-directional SCR structure with Ultra-Low-Capacitance and Low Trigger Voltage DDSCR (ULCTDDSCR) is designed for this purpose. The structure is based on the DDSCR structure design, which reduces the capacitance of the device by increasing the spacing between the P-type injection wells and the N-type injection wells, and a high-concentration reverse diode is embedded at the edge of the injection wells to reduce the trigger voltage of the device.