Improved Power Semiconductor Dynamic Testing Circuit to Suppress Leakage Current

Double pulse testing (DPT) is widely used for dynamic performance testing of power semiconductors, as it can quickly obtain dynamic characterization parameters. In recent research, chips are often explored as they approach the limit temperature. However, during conventional DPT, leakage currents increase steadily at high temperatures and high-voltage circumstances. The self-heating effect of leakage current makes it impossible to maintain the desired junction temperature, which causes thermal runaway. By building a thermal impedance model, this article analyzed the thermal failure mechanism caused by leakage current and proposed an improved circuit. Experimental results showed that the circuit could successfully suppress leakage current from over 100 mA to less than 10 mA.