Design Continues Mode Inverse Class-F Power Amplifier

This paper outlines the design, simulation, and testing of a continuous mode inverse class-F (CMICF) power amplifier (PA) specifically optimized for GSM applications. The comprehensive design methodology encompasses DC analysis, optimum load impedance calculation, stability circuit analysis, and input and output matching circuit design. The amplifier is built using Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT), and it introduces a novel technique for designing the output matching network (OMN). This technique involves extracting parasitic elements from the power device using a tuning method and employs a graphical approach with the Smith chart utility to obtain the second and third harmonics of the output signal. The resulting design achieves high efficiency with a reduced component count, simplifying the overall design process and reducing costs. The design work was facilitated using Keysight ADS software. Operating in the frequency range of 1.5 GHz to 2 GHz, the amplifier demonstrates a maximum output power of approximately 40 dBm and a power gain of 16 dB, with a power-added efficiency exceeding 70%.