A multilevel metallized DSA MOS masterslice

A new LSI with high-speed capability and high-packing density for computer use has been successfully achieved within a short turnaround time by a new DSA MOS masterslice. Two-level metallization has been accomplished by the use of full plasma processes. The average gate delay time of the new masterslice was improved to 2 ns compared with 3 ns in the case of single-level metallization.