Abstract:
A new model for computer simulation of capacitance effects in MOS transistors is presented. Transient currents are found directly from the charge distribution in the devi...Show MoreMetadata
Abstract:
A new model for computer simulation of capacitance effects in MOS transistors is presented. Transient currents are found directly from the charge distribution in the device rather than from capacitances. The effective capacitances which result are nonreciprocal. The model guarantees conservation of charge and includes bulk capacitances. Several circuit examples are considered.
Published in: IEEE Journal of Solid-State Circuits ( Volume: 13, Issue: 5, October 1978)
Referenced in:IEEE RFIC Virtual Journal