Surge Current Handling Capability of SiC FETs

This work investigates the surge current withstand and breaking capability of a 1200V-2mohm SiC FET. The device output characteristics, turn-off characteristics, and thermal impedance have been measured. An electro-thermal model has been constructed to determine the time-current characteristics of the device. The experimental results show that the device can reliably withstand and turn off a surge current more than 7 times of its continuous current rating at the maximum rated junction temperature. The excellent surge current handling capability proves that SiC FETs are excellent candidates for solid-state circuit protection applications.