Performance Analysis of FinFET based Operational Amplifier at 20 nm gate Length

The size of the Integrated circuit (IC) reduced, as technology nodes became lower. The design of ICs suffers from short-channel effects due to MOSFET scaling in the nanoscale regime, which have a significant impact on the effectiveness or dependability of the system. For minimising short channel effects in lower technology nodes, FinFET devices are proposed due to their better electrostatic control over the channel. In this work, a hetero-dielectric (HD) triple-gate FinFET is presented with stacked gate oxides. It shows better performance than the conventional FinFET. The device is used to analyze the performance of single stage and two stage operational amplifiers.