Design of Miniaturized Silicon Based SiP TR Module

Based on the silicon based 3D heterogeneous integration technology, we propose a silicon based SiP TR module. The TR module is stacked by two layers of silicon based modules. The silicon based modules are interconnected by metal solder balls. The TSV vertical interconnection structure is embedded the silicon based module, whose functions include numerical control phase shifting, numerical control attenuation, low noise amplification and power amplification. The test results show that the TR module has a single channel transmission power of more than 10W and a reception gain of more than 23dB in the Ku band. It has excellent RF performance and achieves the miniaturization of the TR module.