A Gate Driver Circuit for Crosstalk Suppression of SiC MOSFET in Half-bridge Configuration

Fast switching speed, high switching frequency, low conduction loss, and high temperature resistance are among SiC MOSFET's best qualities. This makes it a common component in high-power applications. However, the SiC MOSFET bridge circuit will experience significant phase-leg crosstalk because of the greater di/dt and dv/dt during the switching operation as well as the combined influence of parasitic characteristics. It will prevent switching frequency from rising and make power electronic equipment less reliable. In order to reduce crosstalk in a half-bridge topology, a gate driver circuit for SiC MOSFET is suggested in this study. The suggested gate driver employs a passive triggered transistor with a series capacitor to provide a low impedance branch for the crosstalk current to suppress voltage spikes, and a Zener diode and capacitor in parallel to generate a negative gate-source voltage and thereby perform the voltage level shifting without the use of a negative voltage supply. This gate driver could meet the strict requirements of high switching SiC MOSFETs with minimal expense and control complexity, and the design guidelines for the main parameters and working principle were then examined. Finally, experimental double pulse testing and simulations are used to demonstrate the effectiveness of the suggested driving circuit.