Accelerated dark current degradation study of monolithically integrated In0.2Ga0.8As/GaAs-on-Si nano-ridge photodetectors

The reliability of In
_0.2
Ga
_0.8
As/GaAs nano-ridge photodetectors monolithically integrated on 300 mm Si substrates is first reported. Dark current increases and saturates at 2×10
^-5
A/cm
²
at 85 °C after stress, which is still sufficiently low. Carrier emission from pre-existing defects is identified as the dominant degradation mechanism.