Comparison of High Energy X-Ray and Cobalt-60 Irradiations on MOS Capacitors

The use of a high energy X-ray generator for Total Ionizing Dose (TID) testing is studied on metal-oxide semiconductor (MOS) capacitors. Several conditions were studied for the high energy X-ray irradiations (with aluminum and lead filters) and the experimental results are compared to Cobalt 60 (Co-60) irradiations. The effects of both annealing and package lid are also studied. All of the results are presented and discussed. It is shown that the simple BEOL stack (only one thin aluminum layer) has no effect on dose deposition in the oxide of MOS capacitors.