Large-signal characterization and behavioral modeling of mm-wave GaN HEMT switches tailored for advanced power amplifier architectures

This paper presents a characterization and modeling campaign on high-power microwave switches based on GaN High Electron Mobility Transistor (HEMT) structures. The large-signal characterization is performed at 30 GHz using load-pull, allowing for testing different terminations for the switch and hence emulating the different conditions in which it might be used. The experimental data obtained is used to extract a Cardiff behavioral model that automatically enables interpolation of the data where it is noisy, and its use in a CAD simulator. Having a model for the switch that captures the response in different conditions is particularly important to enable their use in designing advanced PA architectures that use tunable elements to achieve more flexible operation.