Performance Evaluation of Nanosheet Junctionless FET for switching applications

A nanosheet junctionless FET (NS-JLFET) has been proposed in this article. The applicability of the proposed device is explored for digital or switching results in this paper. The gate length is chosen to be 12 nm for proposing the device but it is varied to assess its impact on various parameters. The results are evaluated by considering two different spacer materials, viz. HfO
2
and SiO
2
. The performance parameters such as I
ON
/I
OFF
, SS, DIBL and Vt have been simulated using the ATLAS
^TM
TCAD simulator. It can be concluded from the simulations that by choosing HfO
2
as the spacer material, improved switching performance has been obtained. For the case of L
G
of 12 nm, the device achieved the I
ON
/I
OFF
of 4.8 x 10
⁹
, SS of 84.8 mV/dec and V
t
of 0.6 V.