Multi-Stage Low Noise Amplifier for RF Transceiver Front-End

This work describes the design and implementation of a wide band low-noise amplifier (LNA) without an inductor that is intended to be used as the front end of an RF transceiver. In order to achieve high gain with less power consumption, the proposed LNA uses a common gate (CG) with active shunt feedback as the input stage for effective impedance matching, followed by a complementary PMOS and NMOS pair in the next stage with current reuse structure to attain high gain and low power dissipation. Additionally, a noise-cancelling stage is included to aid in achieving low noise levels and get appropriate output impedance matching. Multiple wireless technologies are targeted by the LNA's frequency range of 0.5 GHz to 2.5 GHz. UMC 180 nm technology is used to realize the LNA. The simulation results reveal that the LNA has a minimum NF of 3.72 dB and a maximum gain of 11.46 dB with a 2 GHz 3 dB gain bandwidth. 0 dBm is the input third-order intercept point and input return loss is -16 dBm. The LNA utilizes a power of 4.58 mW of with 1.8 V supply voltage.