Broadband GaAs Monolithic Low Noise Amplifiers and Switches for L-Band

An 800 MHz-1800 MHz two stage low noise feedback amplifier and a high performance SPDT switch have been developed as general purpose ICs. A gain of 19 ± 1.2 dB and a noise figure of 3.0 dB have been measured for the amplifier chips. An insertion loss of 1 dB with 20 dB off isolation has been measured for the switch chip. Full RF and DC bias circuitry is included on the chips. A novel IC package has been designed based on a leadless chip carrier for surface mounting onto a thick film substrate.