4H-SiC Trench-Gate MOSFET with a Step-Shaped Deep P+ Source Area and an Extra n-Type Shielding Area

This paper brought up a novel 4H-SiC U-shaped trench- gate MOSFET to increase the devices’ performance. The new-structured device featured a step-shaped bottom corner in its P+ source area and an extra n-type shielding area. To verify its performance, a series of the simulation was operated using Silvaco TCAD. The step-shaped corner showed a 36% increase in breakdown voltage. Meanwhile, the n-type shielding area could reduce the on-resistance by 36%. As a result, the novel device could obtain a 71% enhancement in the figure of merit (FOM).