A 4K × 1 Bit Complementary E-JFET Static RAM

A 4K × 1 bit static RAM, based on a six transistor complementary memory cell, has been designed fabricated and tested. The circuit uses enhancement mode n- and p-channel JFET transistors and p- and n-type resistors. SRAMs in packages were tested to be fully functional with the GALPAT test pattern. Chip size was 3.9 mm × 4.9 mm. Typical power dissipation was 200 mW and typical access time was 10 ns.