Monolithic Transmit/Receive Switch for Millimeter-Wave Application

A state-of-the-art RF performance has been achieved for a monolithic millimeter-wave GaAs PIN diode switch. The planar microstrip PIN diode switch is fabricated on a 4-mil thick semi-insulating GaAs substrate utilizing advanced selective ion implantation technique. The measured insertion loss for the switch-on path is less than 1.5 dB across a 6 GHz bandwidth (59-65 GHz) for two shunt-mounted PIN diodes· The isolation, switchoff, is also measured to be greater than -30 dB across 4 GHz bandwidth (62.5-66.5 GHz). The monolithic PIN diode switch circuit has also demonstrated a switching speed of less than 2A nanoseconds and RF power handling capability in excess of 1.6 Watts.