Gallium Arsenide MESFET Technologies with 0.7 µm Gate-Length for 4kb 1ns Static RAM

Gallium Arsenide MESFET technologies with 0.7µm gate-length are developed for 4kb Ins Static RAM. For the practical use of GaAs SRAM, the high-speed performance is naturally very important. And another important item is the reliability, for example, the immunity of soft-errors induced by alpha-particles. In this study, the additional p-type layer is newly introduced in the GaAs MESFET for both the suppression of short-channel effect and the improvement of soft-error immunity. This technology was successfully applied to a 4kb SRAM. The access time of 1 ns was obtained in the 4kb SRAM.