Design and Fabrication of a Digital RF Memory using Custom Designed GaAs Integrated Circuits

This paper describes the design constraints which required solution during the implementation of a mixed Gallium Arsenide/silicon ECL Digital RF Memory (DRFM). This unit, which is configured to digitize an analog signal at 1 GHz rates, has served as a test bed for ten separate designs for the high clock rate front and back ends of the DRFM system. Preliminary test results from the GaAs components are presented and discussed.