A 2-8 GHz 2 Watt Monolithic Amplifier

A 2-8 GHz, 2 watt 10 dB gain power amplifier has recently been designed and tested which utilizes a new and unique GaAs power FET device design, a slow-wave transmission line matching structure and large capacitance (1340 pF/mm²) tantalum pentoxide capacitor processing technology. The two-stage power amplifier with input, interstage, and output matching as well as bias circuitry is included on a 7.7 mm² × 0.1 mm chip. Initial results from amplifier chips designed with approximated FET S-parameters show 10 to 13 dB gain from 1.7 to 8 GHz. Maximum output power of 2 watt was achieved at 2 dB compression with 20% power-added efficiency.