High Performance Ternary Inverter based on FinFET Models

The complexity of binary logic based digital circuits is gradually increasing which demands for multi value logic. In this article an in-depth device level characteristics of SVT FinFET model is outlined. The ternary inverter designed using different FinFET models namely LVT, SVT and HVT is designed and compared which consume less power and energy than the other technology such as MOSFET and CMOS. The results show the power as 37.4, 19.3 and 15.6 (nW) for LVT, SVT and HVT models, respectively. Further, the power delay product (x 10-21J) as 88.63, 90.71 and 179.55 for LVT, SVT and HVT models, respectively. The proposed ternary inverter design is useful for computing devices, memories used in IOT and biomedical applications.