Mathematical Validation of 100nm n-MOSFET using Silvaco TCAD

This paper attempts to prove the mathematical validation of 100nm n-channel Metal Oxide Semiconductor-FET (MOSFET), with their characteristics and extraction of parameters, i.e. Characterization, the theoretical and practical analysis using Silvaco-TCAD. While performing mathematical validation, a comprehensive study was made, which covers the functioning and mechanism of MOS Devices. Various aspects of MOS devices have been analyzed and validated in this paper, including the “drain current
$(\mathrm{I}_{\mathrm{D}})$
versus drain voltage
$(\mathrm{V}_{\text{DS}})$
“relation, the “drain current
$(\mathrm{I}_{\mathrm{D}})$
versus gate voltage
$(\mathrm{V}_{\text{GS}})$
“relation, transconductance
$(\mathrm{g}_{\mathrm{m}})$
, drain resistance
$(\mathrm{r}_{\mathrm{D}})$
, or ON resistance and threshold voltage
$(\mathrm{V}_{\mathrm{T}})$
.