A K-Band Power Amplifier Design Based on 130 nm SiGe Technology with Gain Over 22.4 dB Operating Up to 120 $^{\circ}\mathrm{C}$

A K-band high-gain, high-efficiency power amplifier chip based on 130 nm SiGe BiCMOS has been designed. A differential common-emitter is adopted to reduce the power consumption. To enhance the performance in the millimeter-wave frequency band, optimizations have been applied to the layouts of the transistors. Neutralization capacitor techniques is employed to mitigate the impact of base-collector capacitance. Additionally, the stacked-switch transistor design is easy to control the on/off condition of the PA. The simulated results of the PA demonstrate a peak gain of 27 dB, the saturated output power of 14.4 dBm, and the peak power added efficiency (PAE) of 23.1% at 24 GHz with a 3-dB bandwidth of 8 GHz from 16.9 to 24.9 GHz. Meanwhile, the total area of this PA die is 1.16 × 0.72 mm
²
.