Energy-Efficient Reconfigurable Transistor Achieving Sub-Nanojoule Consumption Per Programming Event

We hereby present experimental demonstration of the energy-efficient ferroelectric based electrostatically doping (Fe-ED) reconfigurable field-effect transistors (RFETs). By incorporating the ferroelectric program gates (Fe-PGs), our Fe-ED RFETs obtain the non-volatile reconfigurability between N/P modes. This achievement leads to an unprecedentedly low energy consumption per programming event, measuring below the nanojoule range. Additionally, these devices exhibit remarkable endurance, withstanding over 104 programmable cycles even under 1 ms pulse stress, and acceptable retention, maintaining their operation modes for at least 104 s. This device strategy represents a significant leap toward the development of highly energy-efficient reconfigurable integrated circuits.