Formation of oxide islands on the p-type gallium arsenide surface by electrochemical etching

This paper investigates the electrochemical dissolution processes of Gallium Arsenide (GaAs) in an HF:C
2
H
5
OH electrolyte mixture. We elucidate the mechanism of oxide formation on the GaAs surface, emphasizing the role of charge carriers in the selective etching process. The study particularly considers the emergence and stability of oxide compounds, providing insights into their applications in the optoelectronics and semiconductor industry.