The growth of high quality heteroepitaxy ZnTe layers using low-temperature buffer

Although there have been successful demonstrations of buffer layer growth for the heteroepitaxy of large mismatched systems, however, general selection rule for the buffer layer is still unknown because the role of a buffer layer is not fully understood. In this article, heteroepitaxy ZnTe layers are grown on GaAs (001) substrates by molecular beam epitaxy (MBE). Prior to the main growth, a thin (~30nm) ZnTe buffer layer is introduced at low temperature (LT-buffer) and the effect of LT-buffer to the high temperature grown ZnTe layers have been investigated.