Aluminium incorporation for growth optimization of long-wavelength InAs/GaAs quantum dots by molecular beam epitaxy

Summary form only given. We investigate the use of Al in both the lower and the upper embedding layers. We demonstrate that increasing the Al content in the lower InAlGaAs embedding layer increases the QDs density dramatically while introducing a thin InAlAs cap layer can increase the QDs density and also tune the InAs QD ground state emission wavelength to 1.3 /spl mu/m and increase the energy separation between the ground and the first excited state transitions. AFM and PL spectra were used to characterize the QDs.