Growth temperature and nitrogen composition dependence of growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxy

The self-assembled In(Ga)As quantum dot (QD) laser have been realized for the long wavelength emission and improvement of laser characteristics. However, In(Ga)As QD lasers still have some problems, such as an increase of threshold at high temperature, and low gain. These problems are due to difficulty in control of the size and the density, which are related to the wavelength and the threshold. The GaInNAs system has been developed as the QW for elongating the emission wavelength. The introduction of the nitrogen (N) into In(Ga)As QDs is an attractive choice because of the possibility of independent control of the wavelength and dot density. In this study, we have investigated the growth characteristics of GaInNAs QDs by CBE in detail.