Theoretical study of In surface kinetics during MBE growth of InGaAs and InGaN

A rate equation model is employed to investigate the In desorption rate in InGaAs and In segregation rate in InGaN. The results, which are in good agreement with the experiment, suggest that the activation energies for In desorption in InGaAs from the physisorbed layer of In and the surface of the crystal, are 0.18 eV and 2.6 eV, respectively and the activation energy for In segregation in InGaN is 2.9 eV.