Device and materials characteristics of MBE-grown InAs bipolar transistors

The large electron mobility and high saturation velocity of InAs make it a promising material for the operation of high speed electronic devices. As semiconductor scaling continues to reduce device size, the smaller bandgap III-Vs, such as InAs, play a more prominent role in the design of new low power devices. The present work involves materials and device investigations related to InAs-based bipolar transistors grown by molecular beam epitaxy (MBE).