The experimental study of high TCR Pt thin films for thermal sensors

Presents some results of temperature coefficient of resistance (TCR) measurements on platinum (Pt) thin films as a detecting resistive material for thermal type sensors. We have shown that by using an oxidized Si substrate with a SiNx layer and an Al/sub 2/O/sub 3/ buffer layer, the obtained TCR value is 3.7/spl times/10/sup -3///spl deg/C after annealing at 1100/spl deg/C in air. It is expected that this result will lead to the improvement of thermal microsensors.