Thermal Characterization of Power Module with BCI-ROMs

This paper presents a study on the thermal characterization of SiC MOSFETs within automotive power modules. We employ the thermal transient measurement method, simulation techniques, thermal model calibration procedures, and a boundary condition independent reduces-order model (BCI-ROM) to comprehensively analyze and understand the thermal behavior of theses module. Thermal model calibration using the thermal transient measurement is performed to enhance the accuracy of thermal simulation and improve component reliability. Furthermore, a BCI-ROM is demonstrated for automotive mission power profiles, derived from a fully detailed calibrated model. ROM aims to decrease computational complexity, enabling faster solving while maintaining predictive accuracy in both space and time.