Temperature Dependence of Oxygen Annealing Effect on Electrical Properties of GaOx/Si Structure by Mist Chemical Vapor Deposition

We studied the temperature dependence of oxygen annealing effect on electrical properties of gallium oxide (GaO
x
)/silicon (Si) structure fabricated by mist chemical vapor deposition (CVD). Capacitance-Voltage (C-V) techniques characterized the effective fixed charge density (Q
eff
) and the interfacial trap density (D
it
). The composition ratio and the chemical bonding state of the GaO
x
/Si structure were determined by XPS spectra. As a result, the negative Q
eff
and D
it
increased with increasing the oxygen annealing temperature. Form the results of XPS spectra, it was found that the increase of the oxygen annealing temperature decreased in oxygen vacancies in the GaO
x
layer and in the Ga-Si-O bond at the GaO
x
/Si interface.