2-6GHz 30W GaN Power Amplifier Using Reactive Matching Technique

This paper introduces a compact 2-6 GHz power amplifier (PA) MMIC utilizing Sanan’s 0.25-$\mu$m gallium nitride high-electron-mobility transistor (GaN HEMT) technology. The design focuses on implementing the output matching network (OMN). Meanwhile, the reactive matching (RM) technique and direct parallel power combiners are employed to reduce power loss and chip area in this PA. Under a drain voltage of 28 V, the GaN PA achieves an average output power (Pout) of 45 dBm (31W) and an average power gain of 19 dB, with a power-added efficiency (PAE) ranging from 27% to 40% over the entire bandwidth. The proposed chip has an area of $4.5\times 3.4$ mm
²
and an average power density of 5 W/mm
²
.