High-Temperature Electronics Using $\beta{-}$ Ga203 FETs and AIGaN/GaN HEMTs

Development of high-temperature compatible electronic devices is desired for several applications. Electronic devices made with wide bandgap and ultra-wide bandgap materials are suitable for these high temperature applications. In this article, we presented high temperature device data obtained from p-Ga203 field-effect transistors (FETs) and AIGaN/GaN high-electron mobility transistors (HEMTs) at temperatures up to 500 oC, We discussed device details, systematically analyzed the electrical data by considering insights obtained from materials characterization, and explained the variation in device parameters (such as transconductance, threshold voltage, contact resistance, gate leakage) with temperature and time.