Dead-Time Evaluation With Switching Frequency for GaN-Based Non-Inverting Buck-Boost DC–DC Converter Using FPGA-Based High-Frequency Control

The distinctive characteristics, such as fast switching and higher power density of gallium nitride (GaN) power semiconductor devices, are fascinating for power electronic applications. That makes it suitable for achieving high efficiency at high switching frequency operation. However, the control at higher switching frequency operation and evaluation of dead time is pivotal to achieving it. This article presents the GaN-based non-inverting buck-boost (NIBB) dc–dc converter for high-frequency and high-efficiency operation. The feedback control was designed and implemented using FPGA for the operation of the converter at a switching frequency of 500 and 800 kHz under different operating load conditions. Furthermore, the dead time evaluated corresponds to switching frequencies and load conditions. The PCB layout was designed to develop an experimental prototype of the NIBB converter developed using the LMG5200 GaN half-bridge chip (80 V, 10 A). The converter is tested for the 48–48 V operation considering the LED applications with a one-to-one voltage ratio and a Pareto front curve is given for the 250 kHz, 500 kHz, 800 kHz, and 1 MHz switching frequency.