Temperature Sensitive Electrical Parameters Selection for 10 kV SiC Power Module

This paper presents temperature sensitive electrical parameters (TSEPs) selection for a 10 kV silicon carbide (SiC) MOSFET power module. Static parameters including ON-state resistance and threshold voltage are introduced. A double pulse test (DPT) platform is built to test the power module on a hotplate, and the switching transient behavior in a temperature range from 25℃ to 125℃ is analyzed in detail. Various parameters during turn on and turn off are measured and compared based on their temperature linearity and sensitivity. Load current and gate resistance impacts on measurement are discussed, as well as comparisons to low voltage SiC MOSFETs.