4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design

The fabrication of a novel Vacuum UV (VUV) sensitive 4H-SiC pin photodiode is presented. Aluminum ion implantation was used to fabricate a patterned emitter structure with p
^-
and p
⁺
regions resulting in the highest reported VUV sensitivity for a SiC pin photodiode.