Abstract:
The fabrication of a novel Vacuum UV (VUV) sensitive 4H-SiC pin photodiode is presented. Aluminum ion implantation was used to fabricate a patterned emitter structure wit...Show MoreMetadata
Abstract:
The fabrication of a novel Vacuum UV (VUV) sensitive 4H-SiC pin photodiode is presented. Aluminum ion implantation was used to fabricate a patterned emitter structure with p- and p+ regions resulting in the highest reported VUV sensitivity for a SiC pin photodiode.
Published in: 2023 IEEE Photonics Conference (IPC)
Date of Conference: 12-16 November 2023
Date Added to IEEE Xplore: 25 December 2023
ISBN Information:
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