Quantum transport modeling in nano-scale devices

We present results and describe progress we have made in the development of our quantum transport modeling for nanoscale devices. Our simulation is based upon either the nonequilibrium Green's function method (NEGF) or the quantum correction (QC) associated with the density gradient method (DG) and/or the effective potential method (EP). We show the results of our modeling methods applied to several devices and discuss issues faced with regards to computational time, open boundary conditions, and their relationship to self-consistent solution of the Poisson-NEGF equations. We also discuss those for efficiently tailored QC Monte Carlo techniques.