Characteristics of intersubband absorption at optical communication wavelengths in GaN/AlN multiple quantum wells

Summary form only given. The authors report the intersubband transition at 1.3-1.5 /spl mu/m in a GaN/AlN MQW structure stacked with single quantum wells. By adopting AlN, the highest energy barrier can be achieved for a GaN well, which leads to good carrier confinement at the upper level. They also measured the saturation intensity, which is a necessary parameter for device designs.