Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications

Ultra-steep subthreshold slope FBFETs are promising candidates for next-generation memory and sensing devices. The characteristic of Subthreshold slope less than 10mV/dec enables efficient memory cell design and reduces power consumption during OFF-states, making FBFETs ideal for memory and sensing applications. In this paper, we demonstrate the use of FBFETs for both memory and sensing applications. For sensing, we have used Gouy-Chapman-Stern and site-binding model to calculate the surface potential on the sensing surface of the proposed device due to the protonation and deprotonations based on the pH of the electrolyte. For memory, we will target the memory window due to trapped charges or a single polyoxometalate cluster. We will show that the FBFETs can achieve a larger memory window and a sensing sensitivity crossing the Nernst limit. These results will demonstrate the potential of FBFETs for a wide range of applications.