Schottky Barrier Diode Based on Ge-Doped $\alpha-\text{Ga}_{2}\mathrm{O}_{3}$ Films Grown by Mist-CVD Method

We fabricated Schottky barrier diodes (SBDs) based on Ge-doped
$\boldsymbol{\alpha}-\mathbf{Ga}_{\mathbf{2}}\mathbf{O}_{\mathbf{3}}$
films grown by mist-CVD method. The transfer length methods (TLM) were performed for Ti/Au and Ti/Al/Ti/Au electrodes before and after rapid thermal annealing (RTA) to confirm ohmic contact and to estimate the sheet and contact resistance. For both electrodes, the RTA was found to be effective to improve the ohmic characteristics. For SBD with Ti/Al/Ti/Au ohmic electrode for which RTA was carried out at 450 °C, the ideality factor, the barrier high and the on-resistance were estimated to be 1.10, 1.01 eV and
$\mathbf{4}.\mathbf{9}\ \mathbf{m}\mathbf{\Omega}\text{cm}^{2}$
, respectively. The analysis on resistance of n-drift layer as well as sheet and contact resistance of n
⁺
layer clarifies that the on
^-
resistance is mainly governed by the sheet and contact resistance for the present SBD.