A 76–81-GHz Power Amplifier With 14.6-dBm Psat and 25.1% PAE on 22-nm FDSOI Technology

A high-efficiency power amplifier (PA) is demonstrated on GlobalFoundries 22-nm fully depleted silicon-on-insulator (FD-SOI) platform. The two-stack differential PA targets 77-GHz automotive radar applications and achieves a saturated output power (
$P_{\text {sat}}$
) of 14.6 dBm with 25.1% peak power added efficiency (PAE) while consuming 57 mW of static power from a 1.6-V power supply. To the best of our knowledge, this design presents the highest single-stage PAE within 76–81-GHz frequency range reported to this date on CMOS technology.