Voltage Driving Yellow Electroluminescence From β-CaSiO3:Mn2+ in Silicon Photonics

Silicate-based optical functional materials have garnered significant attention owing to their exceptional luminescence properties, chemical and thermal stability, and cost-effectiveness. Herein, a yellow-emitting electroluminescent device based on an alkaline metasilicate has been introduced. The device follows the metal-oxide-semiconductor structure, comprising multi-dielectric layers sandwiching the Mn2+-doped $\beta $ -CaSiO3 optical functional layer in a silicon substrate. Under voltage driving, the device emits a yellow spectrum on a large scale with an emission center at 555 nm, which is optically attributed to the d-d transitions of Mn2+ ions occupied in the host lattice. Importantly, the multi-dielectric layer in this structure plays a crucial role in preventing the leakage current and simultaneously improving efficiency. Accordingly, this approach holds promise for the future development of advanced large-scale emitting devices in silicon photonics.