DC/AC/RF Characteristics of Multi-Channel GAA NS FETs with ML and BL MoS2

For the first time, we examine the performance of gate-all-around nanosheet field effect transistor (GAA NS FET) with both monolayer (ML) and bilayer (BL) molybdenum disulfide (MoS2). As compared to the control sample of silicon (Si), MoS2 devices exhibit reduced short-channel effects (SCE) owing to its larger band gap and larger effective mass. The GAA NS FET with BL MoS2 possesses moderate energy bandgap and large channel thickness which exhibits superior on state current and voltage gain.